unisonic technologies co., ltd 2n6718 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2005 unisonic technologies co., ltd qw-r201-056.c npn general planar transistor ? description the utc 2n6718 is designed for general purpose medium power amplifier and switching applications. ? features * high power: 850mw * high current: 1a *pb-free plating product number: 2n6718l *pb-free plating product number: 2n6718g ? ordering information ordering number pin assignment normal lead free plating halogen free package 12 3 packing 2n6718-x-ab3-r 2n6718l-x-ab3-r 2N6718G-X-AB3-R sot-89 b c e tape reel 2n6718-x-t6c-k 2n6718l-x-t6c-k 2n6718g-x-t6c-k to-126c e c b bulk 2n6718-x-t92-b 2n6718l-x-t92-b 2n6718g-x-t92-b to-92 e c b tape box 2n6718-x-t92-k 2n6718l-x-t92-k 2n6718g-x-t92-k to-92 e c b bulk
2n6718 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r201-056.c ? absolute maximum rating (ta=25 , unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 5 v collector current (continue) i c 1 a collector current (pulse) i c 2 a sot-89 0.5 w to-126c 1.6 w total power dissipation to-92 p d 850 mw junction temperature t j +150 storage temperature t stg -55 ~ +150 note absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta=25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =100ua 100 v collector-emitter breakdown voltage (note) bv ceo i c =1ma 100 v emitter-base breakdown voltage bv ebo i e =10 a 5 v collector-emitter satu ration voltage v ce(sat) i c =350ma, i b =35ma 350 mv collector cut-off current i cbo v cb =80v 100 na h fe1 v ce =1v, i c =50ma 80 h fe2 v ce =1v, i c =250ma 50 300 dc current gain h fe3 v ce =1v, i c =500ma 20 current gain - bandwidth product f t v ce =10v, i c =50ma, f=100mhz 50 mhz output capacitance cob v cb =10v, i e =0, f=1mhz 20 pf note: pulse test: pulsewidth 380 s, duty cycle 2% ? classification of h fe2 rank a b range 50~115 95~300
2n6718 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r201-056.c ? typical characteristics current gain, h fe saturation voltage (mv) 110100 1000 10000 100 collector current, ic (ma) saturation voltage vs. collector current saturation voltage (mv) 10 0.1 1 100 collector output capacitance capacitance (pf) 10000 100 cob 1000 1 10 collector base voltage (v) v be(sat) @ic=10i b safe operating area forward voltage, v ce (v) collector current, ic(a) 0.01 0.1 1 10 cutoff frequency vs. collector current collector current, ic(ma) cutoff frequency (mhz) 100 1000 110 100 1 10 100 1s 1ms 100ms f t @v ce =10v
2n6718 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r201-056.c ? typical characteristics power derating ambient temperature, ta( ) power dissipation, p d (mw) 0 500 1000 1500 100 50 150 200 0 2000 to-126c to-92 sot-89 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
